BU536 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust dev

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.c

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU536 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·For color TV horizo