BU508DW डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliabl

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DW www.datasheet4u.com DESCRIPTION ·With TO-247 package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For