BU505D डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semico

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device per

DISCRETE SEMICONDUCTORS DATA SHEET BU505F; BU505DF Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semi

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU505DF www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode. APPLICATIONS ·