BU505 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor BU505 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust devi

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semico

BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features ■ HIGH VOLTAGE CAPABILITY ■ VERY HIGH SWITCHING SPEED ■ HIGH RUGGEDNESS Applications ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGH

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU505 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage,high speed-switching APPLICATIONS ·For horizontal def

isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semico

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device per