BU2520A डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended fo

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520A www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in hori

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS · For use in h

isc Silicon NPN Power Transistor BU2520AW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r