BU2508DF डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU2508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an in

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·F