BU2508D डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an int

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508D www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For

isc Silicon NPN Power Transistor BU2508D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust d

isc Silicon NPN Power Transistor BU2508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an in

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·F

isc Silicon NPN Power Transistor BU2508DW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust