| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
Thyristor DRM Repetitive peak off-state current VD=VDRM Tj=125℃ Tj=125℃ 0.5 mA 0.5 mA VTM On-state voltage IGT Gate-trigger current Quadrant (I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) Rth(j-mb) Thermal resistance ITM= 18A VD = 12 |
|
|
|
|
WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Less sen |
|
|
|
|
NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability |
|
|
|
|
WeEn |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability |
|