डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BSZ900N15NS3G | Power MOSFET s
OptiMOSTM3 Power-Transistor
Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lea |
Infineon |
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BSZ900N15NS3G | Power MOSFET | Infineon |
www.DataSheet.in | 2017 | संपर्क |