BST39 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of 1997 May 22 1999 Apr 26 Philips Semiconductors Product specific

REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base

NPN High-Voltage Transistor FEATURES z Low current(max.100mA). z PC=1.3W. z High voltage(max.350v). Pb Lead-free APPLICATIONS z General purpose switching and amplification. Production specification BST39/BS

SMD Type NPN High-Voltage Transistors BST39; BST40 Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitte) col

BST39,BST40 TRANSISTOR (NPN) FEATURES z Low Current z High Voltage APPLICATIONS z General Purpose Switching and Amplification MARKING:BCT39:AT1 BCT40:AT2 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RAT

Features  BVCEO > 350V  IC = 0.5A High Continuous Current  ICM = 1A Peak Pulse Current  High HFE Hold Up  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. �