BSS84W डाटा शीट PDF( Datasheet )

Production specification P-Channel Enhancement Mode Field Effect Transistor BSS84W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Av

P-CHANNEL 130mA POWER MOSFET BSS84W FEATURES  ADVANCED TRENCH PROCESS TECHNOLOGY  HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE  FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT  IMPROVED

SMD P-Channel MOSFET BSS84W Formosa MS List List................................................................................................. 1 Package outline.............................................

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-s

MOSFET BSS84W-G P-Channel RoHS Device Features - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast Switching Speed. Circuit diagram 3 D 1 G S 2 1.Gate 2.Source 3.Drain 0.053(1