BSS138W डाटा शीट PDF( Datasheet )

BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA Description and Applications This MOSFET has been designed to minimize the on-sta

SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free accord

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138W Description These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistanc

Main Product Characteristics: VDSS RDS(on) 50V 1.4Ω (typ.) ID 0.2A SOT-323 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose a

BSS138WQ 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.28A Description and Applications This MOSFET is designed to meet the stringent r