BSS123LT1 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain–Source

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vd

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101