BSS123 डाटा शीट PDF( Datasheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX  6Ω@10V  10Ω@4.5V   ID 0.17A FEATURE  Surface Mount Package

Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiat

ADVANCE INFORMATION BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.17A Features and Benefits  Low Gate Threshold Voltag

BSS123 June 2003 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprieta

Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin

UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminary 170mA, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC BSS123 is an N-channel mode Power MOSFET, it uses UTC’s advanced technology to provide the custo

PBSS123 100V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 100 V Current 170 mA SOT-23 Features  RDS(ON) , VGS@10V, ID@170mA<6Ω  RDS(ON) , [email protected], ID@130mA<10Ω  Advanced Trench