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BS250 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS250 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product speci |
NXP |
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BS250 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
· · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown
E
A B
TO-92 Dim A B Min 4.45 |
Diodes Incorporated |
|
BS250 | DMOS Transistors (P-Channel) BS250
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦
High input impedance High-speed switching No minority carrier storage time CMOS logic |
General Semiconductor |
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BS250 | P-Channel 60-V (D-S) MOSFET TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TP0610L TP0610T VP0610L VP0610T BS250
V(BR)DSS Min (V)
−60 −60 −60 −60 −45
rDS(on) Max (W)
10 @ |
Vishay Siliconix |
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BS250F | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
BS250F
D G S
PARTMARKING DETAIL MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C |
Zetex Semiconductors |
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BS250KL | P-Channel MOSFET New Product
TP0610KL/BS250KL
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
−60
rDS(on) (W)
6 @ VGS = −10 V 10 @ VGS = −4.5 V
VGS(th) (V)
−1 to −3.0
ID (A)
−0. |
Vishay |
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BS250P | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω
BS250P
D G
S
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Con |
Zetex Semiconductors |
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