BS170 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain – Source Voltage Gate–S

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-chan

BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BS 170 Type BS 170 Pin 2 G Marking BS 170 Pin 3 D VDS 60 V ID 0.3 A RDS(

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.4

BS170 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10