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BS108 | 200 VOLTS N-CHANNEL TMOS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS108/D
Logic Level TMOS
BS108
®
1 DRAIN
N–Channel Enhancement Mode
This TMOS FET is designed for high voltage, high speed switching applicat |
Motorola Inc |
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BS108 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS108 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product speci |
NXP |
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BS108 | DMOS Transistors BS108
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High breakdown voltage High input impedance Low gate threshold voltag |
General Semiconductor |
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BS108 | Small Signal MOSFET BS108
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, micr |
ON Semiconductor |
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