BS107 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Ga

DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci

BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12

VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3

www.DataSheet4U.com BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–rep

Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.