BLF25M612 fiche technique

No.	Partie #	Fabricant	Description
1	BLF25M612G	Ampleon	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of
2	BLF25M612	NXP	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of
3	BLF25M612G	NXP	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of
4	BLF25M612	Ampleon	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of