BL4N60 डाटा शीट PDF( Datasheet )

4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switc

4 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  Robust High Voltage Termination.  Avalanche Energy Specified. Pb Lead-free  Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery

4A,600V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )  Fast switc

4 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  Robust High Voltage Termination.  Avalanche Energy Specified. Pb Lead-free  Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery