डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2304 | N-Channel Power Mosfet Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 2.6A RDS(ON) < 70mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VG |
GME |
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BL2305 | P-Channel Power Mosfet | GME |
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BL2303 | P-Channel Power Mosfet | GME |
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BL2300 | N-Channel Power Mosfet | GME |
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BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2302 | N-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2308 | N-Channel Power Mosfet | GME |
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BL2304 | N-Channel Power Mosfet | GME |
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BL2306 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |