डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2303 | P-Channel Power Mosfet Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = -30V ID = -2.7A(VGS =-10V) RDS(ON) < 190mΩ (VGS = -10V)
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GME |
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BL2305 | P-Channel Power Mosfet | GME |
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BL2303 | P-Channel Power Mosfet | GME |
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BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2302 | N-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2300 | N-Channel Power Mosfet | GME |
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BL2308 | N-Channel Power Mosfet | GME |
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BL2304 | N-Channel Power Mosfet | GME |
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BL2306 | N-Channel Power Mosfet | GME |
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