डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2302 | N-Channel Enhancement Mode Field Effect Transistor Production specification
N-Channel Enhancement Mode Field Effect Transistor BL2302
FEATURES
z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V.
Pb
z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free
z Super high density cell desi |
GME |
|
BL2305 | P-Channel Power Mosfet | GME |
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BL2303 | P-Channel Power Mosfet | GME |
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BL2300 | N-Channel Power Mosfet | GME |
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BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2302 | N-Channel Enhancement Mode Field Effect Transistor | GME |
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BL2308 | N-Channel Power Mosfet | GME |
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BL2304 | N-Channel Power Mosfet | GME |
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BL2306 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |