डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BL2300 | N-Channel Power Mosfet Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
Pb
VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free
VDS=20V,,RDS(ON)=7 |
GME |
|
BL2305 | P-Channel Power Mosfet | GME |
|
BL2303 | P-Channel Power Mosfet | GME |
|
BL2302 | N-Channel Enhancement Mode Field Effect Transistor | GME |
|
BL2300 | N-Channel Power Mosfet | GME |
|
BL2301 | P-Channel Enhancement Mode Field Effect Transistor | GME |
|
BL2304 | N-Channel Power Mosfet | GME |
|
BL2308 | N-Channel Power Mosfet | GME |
|
BL2306 | N-Channel Power Mosfet | GME |
www.DataSheet.in | 2017 | संपर्क |