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BFY51 | NPN medium power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52 NPN medium power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22
Phili |
NXP |
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BFY51 | MEDIUM POWER AMPLIFIER BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.
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STMicroelectronics |
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BFY51 | SILICON PLANAR TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR TRANSISTORS
BFY50, BFY51, BFY52
TO-39 Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM |
CDIL |
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BFY51 | SILICON NPN TRANSISTOR SILICON NPN TRANSISTOR
BFY51
• V(BR)CEO = 30V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications
• Screening Options Available
•
ABSOLUTE MAXIMUM RATING |
TT |
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BFY51 | Bipolar NPN Device BFY51
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) |
Seme LAB |
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BFY51 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C Total Device Dissipation (5>Tc |
Motorola |
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