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BFS17W | NPN 1 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17W NPN 1 GHz wideband transistor
Product specification Supersedes data of November 1992
1995 Sep 04
NXP Semiconductors
NPN 1 GHz wideband transistor
Product specifica |
NXP |
|
BFS17W | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
Type BFS 17W
Marking Ordering Code MCs Q62702-F1645
Pin Configuration 1=B 2=E 3=C
Package SO |
Siemens Semiconductor Group |
|
BFS17W | Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D High pow |
Vishay Telefunken |
|
BFS17W | NPN Silicon RF Transistor NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package
BFS17W
32 1
ESD (Electrostatic discharge) sensitive device, obs |
Infineon Technologies AG |
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