BFR181 डाटा शीट PDF( Datasheet )

BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device,

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) packag

BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector

BFR181T NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electro

BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector

BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device,

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free (RoHS compl