BFR106 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN s

BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostati

Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers •

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot va