डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFP520 | NPN Silicon RF Transistor SIEGET ®45
NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Tra |
Siemens Semiconductor Group |
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BFP520 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite receivers and oscilla |
Infineon Technologies AG |
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BFP520F | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz • Tra |
Infineon Technologies AG |
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