डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BFP450 | NPN Silicon RF Transistor SIEGET® 25
NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Tra |
Siemens Semiconductor Group |
|
BFP450 | Linear Low Noise Silicon Bipolar RF Transistor BFP450
Linear Low Noise Silicon Bipolar RF Transistor
Datasheet
Revision 1.2, 2013-07-29
RF & Protection Devices
Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |