BFG540 डाटा शीट PDF( Datasheet )

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variati

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variati

SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.

isc Silicon NPN RF Transistor INCHANGE Semiconductor BFG540/X DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name