| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
NPN medium frequency transistors • Low current (max. 30 mA) • Low voltage (max. 20 V). APPLICATIONS • HF applications in radio and television receivers • FM tuners • Low noise AM mixer-oscillators • IF amplifiers in AM/FM receivers. DESCRIPTION NPN medium frequency transistor in a T |
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CDIL |
(BF494 / BF495) NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS FE * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL R |
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Micro Electronics |
NPN SILICON RF SMALL SIGNAL TRANSISTOR |
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NXP |
NPN medium frequency transistors • Low current (max. 30 mA) • Low voltage (max. 20 V). APPLICATIONS • HF applications in radio and television receivers • FM tuners • Low noise AM mixer-oscillators • IF amplifiers in AM/FM receivers. DESCRIPTION NPN medium frequency transistor in a T |
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CDIL |
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS E * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 www.DataSheet4U.com NPN SILICON |
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Motorola |
SILICON TRANSISTOR |
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Fairchild Semiconductor |
NPN RF Transistor Unit mW mW/°C °C/W °C/W Electrical Characteristics* Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICES hFE VCE(sat) VBE(sat) VBE(ON) Parameter Collector-Emitter Breakdown Voltage Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector-Emitter |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ，。 Low current, low voltage. / Applications ，，。 HF applications in radio and television receivers, FM tuners, low noise AM mixer-oscillators. / Equivalent Circuit / Pinning 1 23 PIN1：Collector PIN 2：Emitter PIN 3：Base / hFE Classification |
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