डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BF459 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BF457/458/459
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF4 |
INCHANGE |
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BF459 | NPN high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF458; BF459 NPN high-voltage transistors
Product specification Supersedes data of 1996 Dec 06 1999 Apr 21
Philips Semiconductors
Product specific |
NXP |
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BF459 | HIGH VOLTAGE VIDEO AMPLIFIERS This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
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STMicroelectronics |
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BF459 | NPN SILICON RF TRANSISTORS |
Siemens Semiconductor Group |
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BF459 | Silicon NPN Transistor SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
COLOR TV VIDEO AND CHROMA OUTPUT APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS.
BF457 BF458
BF459I
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
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Toshiba |
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