डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BF2030 | Silicon N-Channel MOSFET Tetrode BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive devic |
Siemens Semiconductor Group |
|
BF2030 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF2030...
AGC
|
Infineon Technologies AG |
|
BF2030R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF2030...
AGC
|
Infineon Technologies AG |
|
BF2030W | Silicon N-Channel MOSFET Tetrode BF 2030W
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive dev |
Siemens Semiconductor Group |
|
BF2030W | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF2030...
AGC
|
Infineon Technologies AG |
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