डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BF1009 | Silicon N-Channel MOSFET Tetrode BF 1009
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network
3 4 2 1
VPS05178
ESD: Electrostatic di |
Siemens Semiconductor Group |
|
BF1009S | Silicon N-Channel MOSFET Tetrode BF 1009S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network
ESD: Electrostatic discharge sensitive device, obs |
Siemens Semiconductor Group |
|
BF1009S | Silicon N-Channel MOSFET Tetrode BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
|
Infineon Technologies AG |
|
BF1009SR | Silicon N-Channel MOSFET Tetrode BF1009S...
Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
|
Infineon Technologies AG |
|
BF1009SW | Silicon N-Channel MOSFET Tetrode BF1009SW
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
3 4
input stages up to 1GHz
Operating voltage 9V Integrated bias network
Drain AGC HF Input G2 G1 HF Output + DC
2 1
VPS056 |
Infineon |
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