डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY43 | NPN Transistor isc Silicon NPN Power Transistor
BDY43
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 |
INCHANGE |
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BDY46 | Silicon NPN Power Transistor | INCHANGE |
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BDY46 | Bipolar NPN Device | Seme LAB |
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BDY49 | NPN Transistor | INCHANGE |
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BDY42 | NPN Transistor | INCHANGE |
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BDY47 | NPN Transistor | INCHANGE |
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BDY45 | NPN Transistor | INCHANGE |
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BDY44 | NPN Transistor | INCHANGE |
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BDY43 | NPN Transistor | INCHANGE |
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BDY48 | NPN Transistor | INCHANGE |
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BDY47 | Bipolar NPN Device | Seme LAB |
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