डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY26C | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BDY26C
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed |
Inchange Semiconductor |
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BDY26C | HIGH CURRENT NPN SILICON TRANSISTOR BDY26C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH CURRENT NPN SILICON TRANSISTOR FEATURES
• • • � |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |