डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY26 | NPN SILICON TRANSISTORS BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA.
They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Complian |
Comset Semiconductor |
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BDY26 | NPN Transistor isc Silicon NPN Power Transistor
BDY26
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed |
INCHANGE |
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BDY26A | HIGH CURRENT NPN SILICON TRANSISTOR BDY26A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH CURRENT NPN SILICON TRANSISTOR FEATURES
• • • � |
Seme LAB |
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BDY26B | HIGH CURRENT NPN SILICON TRANSISTOR BDY26B
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH CURRENT NPN SILICON TRANSISTOR FEATURES
• • • � |
Seme LAB |
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BDY26C | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BDY26C
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed |
Inchange Semiconductor |
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BDY26C | HIGH CURRENT NPN SILICON TRANSISTOR BDY26C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH CURRENT NPN SILICON TRANSISTOR FEATURES
• • • � |
Seme LAB |
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