डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY24 | (BDY23 - BDY25)NPN SILICON TRANSISTORS BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS |
Comset Semiconductor |
|
BDY24 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BDY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed · |
Inchange Semiconductor |
|
BDY24B | Bipolar NPN Device BDY24B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
|
BDY24C | Bipolar NPN Device BDY24C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 ( |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |