डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDY13-6 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed · |
Inchange Semiconductor |
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BDY13-6 | Silicon NPN Power Transistor | Inchange Semiconductor |
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