डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDX85B | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V( |
Inchange Semiconductor |
|
BDX85B | Bipolar NPN Device BDX85B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |