BDW94C डाटा शीट PDF( Datasheet )

NPN 型外延达林顿晶体管 NPN EPITAXIAL DARLINGTON TRANSISTOR R BDW94C 主要参数 MAIN CHARACTERISTICS 封装 Package IC VCEO PC(TO-220C) -12A -100V 80W 用途 z 发动机点火 z 高频开关电�

® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPL

BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively January 2005 1

Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, B

www.DataSheet4U.com BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous

isc Silicon PNP Power Transistor INCHANGE Semiconductor BDW94/A/B/C DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min

Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Compleme