BDV66 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·M

BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. co

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·M

BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. co

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·M

BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. co

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·M