BDV65B डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDV65B/D Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 –

BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV6

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPL

BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. c