डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BDV65 | NPN Transistor BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV6 |
Power Innovations Limited |
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BDV65 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot |
INCHANGE |
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BDV65 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPL |
SavantIC |
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BDV65 | NPN SILICON POWER DARLINGTONS BDV65-A-B-C
NNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. c |
Comset Semiconductors |
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BDV65 | Silicon NPN Transistors BDV64 (PNP) & BDV65 (NPN) Silicon Complementary Transistors
Darlington Power Amp, Switch TO−3PN Type Package
Description: The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistor |
NTE |
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BDV65A | NPN Transistor BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV6 |
Power Innovations Limited |
|
BDV65A | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot |
INCHANGE |
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