BDT61 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(M

www.DataSheet4U.com BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continu

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(M

www.DataSheet4U.com BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous C

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61AF DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60AF ·Minimum Lot-to-Lot variations for robust d

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(M

www.DataSheet4U.com BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous C