BD902 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor BD902 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC=

BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895, BD897, BD899 and BD901 7

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD895/897/899/901 ·DARLINGTON APPLICATIONS ·For use in

SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for