BD544 fiche technique

No.	Partie #	Fabricant	Description
1	BD5446EFV	Rohm	Class-D Speaker Amplifier 1) BD5446EFV has two system of digital audio interface. 2 (I S/LJ format, SDATA: 16 / 20 / 24bit, LRCLK: 32kHz / 44.1kHz / 48kHz, BCLK: 64fs (fixed), SYS_CLK: 256fs (fixed)) 2) Within the wide range of the power supply voltage, it is possible to oper
2	BD544	Power Innovations Limited	PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
3	BD544	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
4	BD544B	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
5	BD544	TRSYS	PNP SILICON POWER TRANSISTORS
6	BD544A	TRSYS	PNP SILICON POWER TRANSISTORS
7	BD544A	Power Innovations Limited	PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
8	BD544B	TRSYS	PNP SILICON POWER TRANSISTORS
9	BD544B	Power Innovations Limited	PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
10	BD544C	TRSYS	PNP SILICON POWER TRANSISTORS
11	BD544C	Power Innovations Limited	PNP SILICON POWER TRANSISTORS perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
12	BD544	BLUE ROCKET ELECTRONICS	Silicon PNP transistor ，， BD543 。 High IC, high PC, complement to BD543. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instruct
13	BD544	BOURNS	PNP SILICON POWER TRANSISTORS
14	BD544A	BOURNS	PNP SILICON POWER TRANSISTORS
15	BD544B	BOURNS	PNP SILICON POWER TRANSISTORS
16	BD544C	BOURNS	PNP SILICON POWER TRANSISTORS
17	BD544C	Inchange Semiconductor	Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle
18	BD544A	BLUE ROCKET ELECTRONICS	Silicon PNP transistor ，， BD543 。 High IC, high PC, complement to BD543. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instruct
19	BD544B	BLUE ROCKET ELECTRONICS	Silicon PNP transistor ，， BD543 。 High IC, high PC, complement to BD543. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instruct
20	BD544C	BLUE ROCKET ELECTRONICS	Silicon PNP transistor ，， BD543 。 High IC, high PC, complement to BD543. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instruct