BD241C डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 10

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • High Current Gain − Bandwidt

BD241A BD241C NPN power transistors Features ■ NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Rati

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Coll

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collect