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BD159 | POWER TRANSISTOR NPN SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD159/D
Plastic Medium Power NPN Silicon Transistor
. . . designed for power output stages for television, radio, phonograph and other consumer pr |
ON Semiconductor |
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BD159 | NPN Epitxial Silicon Transistor BD157/158/159
BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings |
Fairchild Semiconductor |
|
BD159 | Plastic Medium Power NPN Silicon Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD157/D
Plastic Medium Power NPN Silicon Transistor
. . . designed for power output stages for television, radio, phonograph and other consumer pr |
Motorola Inc |
|
BD159 | NPN Transistor isc Silicon NPN Power Transistor
BD159
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·DC Current Gain-
: hFE = 30~240(Min) @ IC= 50mA ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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BD159G | Plastic Medium-PowerSilicon NPN Transistor BD159G Plastic Medium-Power Silicon NPN Transistor
This device is designed for power output stages for television, radio, phonograph and other consumer product applications.
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• Suit |
ON Semiconductor |
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